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Export 2070 results:
[ Author(Desc)] Title Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
Valley-dependent many-body effects in two-dimensional semiconductors, S. Das Sarma, E.. H. Hwang, and Q. Li , PHYSICAL REVIEW B, 80 (2009)
Emergent phenomena in quantum Hall systems, S. Das Sarma, J. Eisenstein, V. Pellegrini, and S. Simon , SOLID STATE COMMUNICATIONS, 140, 51 (2006)
Many-body interaction effects in doped and undoped graphene: Fermi liquid versus non-Fermi liquid, S. Das Sarma, E. H. Hwang, and W-K. Tse , Phys. Rev. B, 75 (2007)
Proposal to stabilize and detect half-quantum vortices in strontium ruthenate thin films: Non-Abelian braiding statistics of vortices in a p(x)+ip(y) superconductor, S. Das Sarma, C. Nayak, and S. Tewari , PHYSICAL REVIEW B, 73 (2006)
How to infer non-Abelian statistics and topological visibility from tunneling conductance properties of realistic Majorana nanowires, S. Das Sarma, A. Nag, and J. D. Sau , PHYSICAL REVIEW B, 94, 035143 (2016)
Signatures of localization in the effective metallic regime of high-mobility Si MOSFETs, S. Das Sarma, E.. H. Hwang, K.. Kechedzhi, and L.. A. Tracy , PHYSICAL REVIEW B, 90 (2014)
Velocity renormalization and anomalous quasiparticle dispersion in extrinsic graphene, S. Das Sarma, and E. H. Hwang , Phys. Rev. B, 87 (2013)
Conductivity of graphene on boron nitride substrates, S. Das Sarma, and E.. H. Hwang , PHYSICAL REVIEW B, 83 (2011)
Intrinsic plasmons in two-dimensional Dirac materials, S. Das Sarma, and Q. Li , Phys. Rev. B, 87 (2013)
Two-dimensional metal-insulator transition as a strong localization induced crossover phenomenon, S. Das Sarma, and E.. H. Hwang , PHYSICAL REVIEW B, 89 (2014)
Substrate-induced Majorana renormalization in topological nanowires, S. Das Sarma, H-Y. Hui, P.. M. R. Brydon, and J. D. Sau , NEW JOURNAL OF PHYSICS, 17, 075001 (2015)
Theory of carrier transport in bilayer graphene, S. Das Sarma, E.. H. Hwang, and E.. Rossi , PHYSICAL REVIEW B, 81 (2010)
Hubbard model description of silicon spin qubits: Charge stability diagram and tunnel coupling in Si double quantum dots, S. Das Sarma, X. Wang, and S. Yang , PHYSICAL REVIEW B, 83 (2011)
Mobility versus quality in two-dimensional semiconductor structures, S. Das Sarma, and E.. H. Hwang , PHYSICAL REVIEW B, 90 (2014)
The enigma of the nu=0 quantum Hall effect in graphene, S. Das Sarma, and K. Yang , SOLID STATE COMMUNICATIONS, 149, 1502-1506 (2009)
Short-range disorder effects on electronic transport in two-dimensional semiconductor structures, S. Das Sarma, and E.. H. Hwang , PHYSICAL REVIEW B, 89 (2014)
Topological quantum computation, S. Das Sarma, M. Freedman, and C. Nayak , PHYSICS TODAY, 59, 32-38 (2006)
Dynamics of two coupled semiconductor spin qubits in a noisy environment, S. Das Sarma, R. E. Throckmorton, and Y-. Le Wu , PHYSICAL REVIEW B, 94 (2016)
Screening and transport in 2D semiconductor systems at low temperatures, S. Das Sarma, and E.. H. Hwang , SCIENTIFIC REPORTS, 5 (2015)
Aluminium(III) chloride hexahydrate: an efficient and versatile reagent in organic synthesis, S. Das Sarma, P. Pahari, S. Hazarika, P. Hazarika, M. Jyoti Borah, and D. Konwar , ARKIVOC, 243-263 (2013)
The 2010 Nobel Prize in Physics (Reprinted from Solid State Communications, vol 143, pg 1-2, 2007), S. Das Sarma, A. K. Geim, P. Kim, and A. H. MacDonald , SOLID STATE COMMUNICATIONS, 150, 2207-2208 (2010)
Universal density scaling of disorder-limited low-temperature conductivity in high-mobility two-dimensional systems, S. Das Sarma, and E. H. Hwang , Phys. Rev. B, 88, 035439 (2013)
Electronic transport in two-dimensional graphene, S. Das Sarma, S. Adam, E. H. Hwang, and E. Rossi , Rev. Mod. Phys., 83 (2011)
Introduction to Theoretical Modelling, M. J. Davis, S. A. Gardiner, T. M. Hanna, N. Nygaard, N. P. Proukakis, and M. H. Szymanska , QUANTUM GASES: FINITE TEMPERATURE AND NON-EQUILIBRIUM DYNAMICS, 1, 63-83 (2013)
Towards analog quantum simulations of lattice gauge theories with trapped ions, Z. Davoudi, M. Hafezi, C. Monroe, G. Pagano, A. Seif, and A. Shaw , Phys. Rev. Research, 2, 023015 (2020)