|Title||Origin of spectral brightness variations in InAs/InP quantum dot telecom single photon emitters|
|Publication Type||Journal Article|
|Year of Publication||2019|
|Authors||C. J. K. Richardson, R. P. Leavitt, J-H. Kim, E. Waks, I. Arslan, and B. Arey|
|Journal||J. Vac. Sci. Technol. B|
|Type of Article||Article|
Long-distance quantum communication relies on the ability to efficiently generate and prepare single photons at telecom wavelengths. Low-density InAs quantum dots on InP surfaces are grown in a molecular beam epitaxy system using a modified Stranski-Krastanov growth paradigm. This material is a source of bright and indistinguishable single photons in the 1.3 mu m telecom band. Here, the exploration of the growth parameters is presented as a phase diagram, while low-temperature photoluminescence and atomic resolution images are presented to correlate structure and spectral performance. This work identifies specific stacking faults and V-shaped defects that are likely causes of the observed low brightness emission at 1.55 mu m telecom wavelengths. The different locations of the imaged defects suggest possible guidance for future development of InAs/InP single photon sources for c-band, 1.55 mu m wavelength telecommunication systems.