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Indistinguishable Photons from Deterministically Integrated Single Quantum Dots in Heterogeneous GaAs/Si3N4 Quantum Photonic Circuits

TitleIndistinguishable Photons from Deterministically Integrated Single Quantum Dots in Heterogeneous GaAs/Si3N4 Quantum Photonic Circuits
Publication TypeJournal Article
Year of Publication2019
AuthorsP. Schnauber, A. Singh, J. Schall, S. In Park, J. Dong Song, S. Rodt, K. Srinivasan, S. Reitzenstein, and M. Davanco
JournalNano Lett.
Volume19
Pagination7164-7172
Date PublishedOCT
Type of ArticleArticle
ISSN1530-6984
Keywordsdeterministic sample fabrication, hybrid devices, indistinguishable photons, Quantum Dots, Quantum optics
Abstract

Silicon photonics enables scaling of quantum photonic systems by allowing the creation of extensive, low-loss, reconfigurable networks linking various functional on-chip elements. Inclusion of single quantum emitters onto photonic circuits, acting as on-demand sources of indistinguishable photons or single-photon nonlinearities, may enable large-scale chip-based quantum photonic circuits and networks. Toward this, we use low-temperature in situ electron-beam lithography to deterministically produce hybrid GaAs/Si3N4 photonic devices containing single InAs quantum dots precisely located inside nanophotonic structures, which act as efficient, Si3N4 waveguide-coupled on-chip, on-demand single-photon sources. The precise positioning afforded by our scalable fabrication method furthermore allows observation of postselected indistinguishable photons. This indicates a promising path toward significant scaling of chip-based quantum photonics, enabled by large fluxes of indistinguishable single-photons produced on-demand, directly on-chip.

DOI10.1021/acs.nanolett.9b02758