|Title||Indistinguishable Photons from Deterministically Integrated Single Quantum Dots in Heterogeneous GaAs/Si3N4 Quantum Photonic Circuits|
|Publication Type||Journal Article|
|Year of Publication||2019|
|Authors||P. Schnauber, A. Singh, J. Schall, S. In Park, J. Dong Song, S. Rodt, K. Srinivasan, S. Reitzenstein, and M. Davanco|
|Type of Article||Article|
|Keywords||deterministic sample fabrication, hybrid devices, indistinguishable photons, Quantum Dots, Quantum optics|
Silicon photonics enables scaling of quantum photonic systems by allowing the creation of extensive, low-loss, reconfigurable networks linking various functional on-chip elements. Inclusion of single quantum emitters onto photonic circuits, acting as on-demand sources of indistinguishable photons or single-photon nonlinearities, may enable large-scale chip-based quantum photonic circuits and networks. Toward this, we use low-temperature in situ electron-beam lithography to deterministically produce hybrid GaAs/Si3N4 photonic devices containing single InAs quantum dots precisely located inside nanophotonic structures, which act as efficient, Si3N4 waveguide-coupled on-chip, on-demand single-photon sources. The precise positioning afforded by our scalable fabrication method furthermore allows observation of postselected indistinguishable photons. This indicates a promising path toward significant scaling of chip-based quantum photonics, enabled by large fluxes of indistinguishable single-photons produced on-demand, directly on-chip.