Our research is focused on the development of novel materials and technologies that may be used to build future quantum computers.  Our particulalar interest is in silicon, not only because it is the material at the heart of current conventional computer technology, but because it has many properties that make it a favorable environment for quantum information processing.  Motivated by our previous theoretical work on silicon quantum computer architectures, we are exploring novel approaches to creating semiconductor devices at the atomic scale: we have fabricated and measured the first silicon field effect transistor (FET) devices in which mobile electrons are confined adjacent to a hydrogen terminated silicon surface. These devices have record mobility and exhibit the sixfold valley degeneracy expected on silicon [111].  We have recently extended this technique to hole systems and have observed the fractional quantum Hall effect (FQHE) in a very high mobility electron device.  The FQHE is especially interesting in multivalley systems such as silicon and it is possible that our devices may be a new environment for the preparation and measurement of topological qubits.

In a separate project, we are applying the technologies being developed for ion trap quantum computing to isolate and characterize flakes of levitated spinning graphene.

For more information, please peruse our recent publications or contact the people who have done the work.