Research Areas

FQHE in silicon

The observation of the fractional quantum Hall effect (FQHE) is the sine qua non of high quality two dimensional (2D) materials and surfaces. Originally observed thirty years ago, the...Read more

H terminated Si|111| surface

Our research on H:Si devices is primarily motivated by the need to develop high quality (mobility) electron systems in Si that are amenable to fabrication techniques at or near the atomic scale. ...Read more

Apex of Graphene Trap

A primary motivation behind the creation of the Joint Quantum Institute at the University of Maryland is to foster cross fertilization and collaboration at...Read more