High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces

TitleHigh mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces
Publication TypeJournal Article
Year of Publication2012
AuthorsB. Hu, T. M. Kott, R. N. McFarland, and B. E. Kane
JournalApplied Physics Letters
Volume100
Issue25
Pagination252107
Date Published2012
ISSN00036951
DOI10.1063/1.4729584
Short TitleAppl. Phys. Lett.