Oxide Nanoelectronics for Quantum Information
Electronic confinement at nanoscale dimensions remains a central means of science and technology. I will describe a novel method for producing electronic nanostructures at the interface between two normally insulating oxides, LaAlO3 and SrTiO3. Nanostructures with features as small as 2 nm--comparable to the mean spacing between electrons--are “written” using a conductive atomic force microscope (AFM) technique. The oxide “canvases” are reconfigurable and can be erased and rewritten indefinitely. A wide variety of device concepts have already been demonstrated, including nanowires, tunnel barriers, Fabry-Perot cavities, rectifying junctions, field-effect transistors, single-electron transistors, superconducting nanowires, quantum dots and nanoscale THz emitters and detectors. A major ongoing research effort, which I will highlight in this talk, involves the engineering of topological quantum phases, e.g., those which can support Majorana fermions, and solid-state quantum simulation of strongly correlated fermionic systems.
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